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| MMBF170 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features * * * * * Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage G E D G H K J L M SOT-23 Dim A D TOP VIEW S B C Min 0.37 1.19 2.10 0.89 0.45 1.78 2.65 0.013 0.89 0.45 0.076 Max 0.51 1.40 2.50 1.05 0.61 2.05 3.05 0.15 1.10 0.61 0.178 A B C D E G H J K L M Mechanical Data * * * * * Case: SOT-23, Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking: K6Z Weight: 0.008 grams (approx.) All Dimensions in mm Maximum Ratings Drain-Source Voltage @ TA = 25C unless otherwise specified Symbol VDSS VDGR Continuous Pulsed Continuous Pulsed VGSS ID Pd RqJA Tj, TSTG MMBF170 60 60 20 40 500 800 225 1.80 556 -55 to +150 Units V V V mA mW mW/C K/W C Characteristic Drain-Gate Voltage RGS 1.0MW Gate-Source Voltage Drain Current (Note 1) Total Power Dissipation (Note 1) Derating above TA = 25C Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 2) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-Off Delay Time @ TA = 25C unless otherwise specified Symbol BVDSS IDSS IGSS VGS(th) RDS (ON) gFS Ciss Coss Crss tD(ON) tD(OFF) Min 60 3/4 3/4 0.8 3/4 80 3/4 3/4 3/4 3/4 3/4 Typ 70 3/4 3/4 2.1 3/4 3/4 22 11 2.0 3/4 3/4 Max 3/4 1.0 10 3.0 5.0 3/4 40 30 5.0 10 10 Unit V A nA V W mS pF pF pF ns ns VDD = 25V, ID = 0.5A, VGS = 10V, RGEN = 50W VDS = 10V, VGS = 0V f = 1.0MHz Test Condition VGS = 0V, ID = 100mA VDS = 60V, VGS = 0V VGS = 15V, VDS = 0V VDS = VGS, ID =-250mA VGS = 10V, ID = 200mA VDS =10V, ID = 0.2A Note:1. Valid provided that terminals are kept at specified ambient temperature. 2. Pulse width 300ms, duty cycle 2%. DS30104 Rev. C-2 1 of 2 MMBF170 1.0 0.8 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID, DRAIN-SOURCE CURRENT (A) 0.6 VGS = 10V 9.0V 8.0V 7.0V 6.5V 6.0V 5.0V 4.5V 4.0V 3.5V 3.0V 2.5V 2.0/1.0V 7 Tj = 25C 6 5 VGS = 5.0V 5.5V 4 3 2 1 0 5.0V 0.4 VGS = 10V 0.2 0 0 1 2 3 4 5 0 0.2 0.4 0.6 0.8 1.0 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 On-Region Characteristics ID, DRAIN CURRENT (A) Fig. 2 On-Resistance vs Drain Current 2.0 6 5 4 ID = 50mA RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.5 VGS = 10V, ID = 0.5A RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = 500mA 1.0 VGS = 5.0V, ID = 0.05A 3 2 0.5 1 0 0 -55 -30 -5 20 45 70 95 120 145 0 2 4 6 8 10 12 14 16 18 Tj, JUNCTION TEMPERATURE (C) Fig. 3 On-Resistance vs Junction Temperature VGS, GATE TO SOURCE VOLTAGE (V) Fig. 4 On-Resistance vs. Gate-Source Voltage DS30104 Rev. C-2 2 of 2 MMBF170 |
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